基本信息:
- 专利标题： 碳化硅衬底、设置有外延层的衬底、半导体器件和用于制造碳化硅衬底的方法
- 专利标题（英）：Silicon carbide substrate, substrate having epitaxial layer attached thereto, semiconductor device, and process for production of silicon carbide substrate
- 申请号：CN201180002713.6 申请日：2011-02-21
- 公开(公告)号：CN102473604A 公开(公告)日：2012-05-23
- 发明人： 盐见弘 , 玉祖秀人 , 原田真 , 筑野孝 , 并川靖生
- 申请人： 住友电气工业株式会社
- 申请人地址： 日本大阪府大阪市
- 专利权人： 住友电气工业株式会社
- 当前专利权人： 住友电气工业株式会社
- 当前专利权人地址： 日本大阪府大阪市
- 代理机构： 中原信达知识产权代理有限责任公司
- 代理人： 韩峰; 孙志湧
- 优先权： 2010-132253 2010.06.09 JP
- 国际申请： PCT/JP2011/053720 2011.02.21
- 国际公布： WO2011/155234 JA 2011.12.15
- 进入国家日期： 2011-12-29
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205
Disclosed are: a silicon carbide substrate having reduced on-resistance; a substrate having an epitaxial layer attached thereto; a semiconductor device; and a process for producing a silicon carbide substrate. The silicon carbide substrate (10) has a main surface, and comprises an SiC single crystal substrate (1) which is formed on at least a part of the main surface and a base member (20) which is so arranged as to surround the SiC single crystal substrate (1). The base member (20) comprises a boundary region (11) and a base region (12). The boundary region (11) is adjacent to the SiC single crystal substrate (1) in the direction along the main surface, and has a grain boundary therein. The base region (12) is adjacent to the SiC single crystal substrate (1) in a direction that is vertical to the main surface, and has higher impurity concentration than that in the SiC single crystal substrate (1).
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |