基本信息:
- 专利标题： 一种在绝缘基底上制备石墨烯纳米带的方法
- 专利标题（英）：Method for preparing graphene nanoribbon on insulating substrate
- 申请号：CN201110206608.6 申请日：2011-07-22
- 公开(公告)号：CN102392225A 公开(公告)日：2012-03-28
- 发明人： 唐述杰 , 丁古巧 , 谢晓明 , 陈吉 , 王陈 , 江绵恒
- 申请人： 中国科学院上海微系统与信息技术研究所
- 申请人地址： 上海市长宁区长宁路865号
- 专利权人： 中国科学院上海微系统与信息技术研究所
- 当前专利权人： 中国科学院上海微系统与信息技术研究所
- 当前专利权人地址： 上海市长宁区长宁路865号
- 代理机构： 上海光华专利事务所
- 代理人： 许亦琳; 余明伟
- 主分类号： C23C16/26
- IPC分类号： C23C16/26 ; C23C16/02 ; B82Y40/00 ; B82Y30/00
The invention provides a method for growing a graphene nanoribbon on an insulating substrate of a cleavage surface with atomic scale smoothness, belonging to the field of low-dimensional materials and novel materials. The method comprises the following steps of: firstly, splitting the insulating substrate to obtain a cleavage surface with atomic scale smoothness, and preparing a monoatomic layer step; and secondly, directly growing the graphene nanoribbon by using the insulating substrate with the regular monoatomic layer step. With the adoption of the characteristics of different nucleation powers of the graphene on the atomic step and the smooth cleavage surface, the graphene is ensured to grow into the graphene nanoribbon with adjustable size only along step edges through regulating conditions, such as temperature, pressure intensity, active carbon atom supersaturation degree and the like. The method for preparing the graphene nanoribbon on the insulating substrate is mainly applied to the field of novel graphene photoelectric devices.
公开/授权文献:
- CN102392225B 一种在绝缘基底上制备石墨烯纳米带的方法 公开/授权日：2013-12-18