基本信息:
- 专利标题： II-III-N半导体纳米粒子及其制备方法
- 专利标题（英）：Ii-iii-n semiconductor nanoparticles and method of making same
- 申请号：CN201110211652.6 申请日：2011-07-27
- 公开(公告)号：CN102344164B 公开(公告)日：2015-05-27
- 发明人： 彼德·内尔·泰勒 , 乔纳森·汉夫纳恩 , 斯图尔特·爱德华·胡帕 , 蒂姆·迈克尔·斯密顿
- 申请人： 夏普株式会社
- 申请人地址： 日本大阪府
- 专利权人： 夏普株式会社
- 当前专利权人： 夏普株式会社
- 当前专利权人地址： 日本大阪府
- 代理机构： 中科专利商标代理有限责任公司
- 代理人： 陈平
- 优先权： 1012644.9 2010.07.28 GB
- 主分类号： C01G15/00
- IPC分类号： C01G15/00 ; C01G9/00 ; C01G9/08 ; C01B21/06 ; B82Y40/00 ; B82Y30/00 ; C30B29/38
The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
公开/授权文献:
- CN102344164A II-III-N半导体纳米粒子及其制备方法 公开/授权日：2012-02-08