![大功率高效用能型高频开关电源的综合控制方法](/CN/2011/1/32/images/201110163686.jpg)
基本信息:
- 专利标题: 大功率高效用能型高频开关电源的综合控制方法
- 专利标题(英):Comprehensive control method for high-power efficient energy consuming high-frequency switching power supply
- 申请号:CN201110163686.2 申请日:2011-06-17
- 公开(公告)号:CN102255529B 公开(公告)日:2012-06-27
- 发明人: 罗安 , 马伏军 , 王逸超 , 帅智康 , 吴敬兵 , 吴传平 , 邓才波
- 申请人: 湖南大学
- 申请人地址: 湖南省长沙市麓山南路2号
- 专利权人: 湖南大学
- 当前专利权人: 湖南大学
- 当前专利权人地址: 湖南省长沙市麓山南路2号
- 代理机构: 长沙正奇专利事务所有限责任公司
- 代理人: 马强
- 主分类号: H02M7/219
- IPC分类号: H02M7/219 ; H02M3/335 ; H02M7/5387
The invention discloses a comprehensive control method for a high-power efficient energy consuming high-frequency switching power supply. The high-power efficient energy consuming high-frequency switching power supply comprises a three-phase current inverter and a high-frequency DC/DC (Direct Current to Direct Current) converter, wherein the high-frequency DC/DC converter consists of a single-phase full-bridge inverter, a high-frequency coupling transformer and a low-voltage rectifier which are connected in series in sequence; the input end of the three-phase current inverter is connected with a group of three-phase capacitors connected in a Y form, and is connected with a power grid through a three-phase inductor L; and the three-phase current inverter is connected with the single-phase full-bridge inverter of the high-frequency DC/DC converter. According to the method, quick response of a system is realized, change of a load is tracked quickly, efficient power consumption of the system is realized, and the voltage and current distortion factors of the system are decreased.
公开/授权文献:
- CN102255529A 大功率高效用能型高频开关电源的综合控制方法 公开/授权日:2011-11-23
IPC结构图谱:
H | 电学 |
--H02 | 发电、变电或配电 |
----H02M | 用于交流和交流之间、交流和直流之间、或直流和直流之间的转换以及用于与电源或类似的供电系统一起使用的设备;直流或交流输入功率至浪涌输出功率的转换;以及它们的控制或调节 |
------H02M7/00 | 交流功率输入变换为直流功率输出;直流功率输入变换为交流功率输出 |
--------H02M7/02 | .不可逆的交流功率输入变换为直流功率输出 |
----------H02M7/04 | ..用静态变换器的 |
------------H02M7/06 | ...应用无控制极的放电管或无控制极的半导体器件的 |
--------------H02M7/145 | ....应用需要熄灭装置的闸流管或晶闸管型器件的 |
----------------H02M7/217 | .....仅用半导体器件的 |
------------------H02M7/219 | ......在桥式连接中的 |