基本信息:
- 专利标题： 具有绒面的铜铟镓硒薄膜电池及其制备方法
- 专利标题（英）：Copper-indium-gallium-selenium thin film battery with suede and preparation method
- 申请号：CN201110179746.X 申请日：2011-06-29
- 公开(公告)号：CN102231398A 公开(公告)日：2011-11-02
- 发明人： 李玉飞 , 肖旭东 , 宋秋明 , 杨春雷 , 卢兰兰
- 申请人： 中国科学院深圳先进技术研究院
- 申请人地址： 广东省深圳市南山区西丽大学城学苑大道1068号
- 专利权人： 中国科学院深圳先进技术研究院
- 当前专利权人： 汉摩尼(江苏)光电科技有限公司
- 当前专利权人地址： 广东省深圳市南山区西丽大学城学苑大道1068号
- 代理机构： 广州华进联合专利商标代理有限公司
- 代理人： 吴平
- 主分类号： H01L31/052
- IPC分类号： H01L31/052 ; H01L31/0352 ; H01L31/18
The invention relates to a copper-indium-gallium-selenium thin film battery and a preparation method. The copper-indium-gallium-selenium thin film battery comprises a glass substrate, a metal back electrode layer, a light absorption layer, a buffer layer, a barrier layer and a window layer which are sequentially laminated, wherein the surface of each of the glass substrate, the metal back electrode layer, the light absorption layer, the buffer layer, the barrier layer and the window layer has suede with the same roughness. The surface of the glass substrate of the copper-indium-gallium-selenium thin film battery has the suede, and the grown thin film battery has an uneven surface, thereby functioning in trapping light. When sunlight is incident, the incident sunlight may form a certain angle with the surface of the battery due to the existence of the suede structure to further increase the probability of generating the photon-generated carriers in P-N junction areas and finally increase photo-generated current.
公开/授权文献:
- CN102231398B 具有绒面的铜铟镓硒薄膜电池及其制备方法 公开/授权日：2012-11-21