基本信息:
- 专利标题： 氮化物基半导体发光元件、制造氮化物基半导体发光元件的方法和发光装置
- 专利标题（英）：Nitride-based semiconductor light emitting element, method for manufacturing nitride-based semiconductor light emitting element, and light emitting device
- 申请号：CN200980141389.9 申请日：2009-10-14
- 公开(公告)号：CN102187480A 公开(公告)日：2011-09-14
- 发明人： 盐谷阳平 , 善积祐介 , 京野孝史 , 上野昌纪 , 中村孝夫
- 申请人： 住友电气工业株式会社
- 申请人地址： 日本大阪府
- 专利权人： 住友电气工业株式会社
- 当前专利权人： 住友电气工业株式会社
- 当前专利权人地址： 日本大阪府
- 代理机构： 中原信达知识产权代理有限责任公司
- 代理人： 王海川; 穆德骏
- 优先权： 2008-269006 2008.10.17 JP; 2009-225350 2009.09.29 JP
- 国际申请： PCT/JP2009/067782 2009.10.14
- 国际公布： WO2010/044422 JA 2010.04.22
- 进入国家日期： 2011-04-18
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
Disclosed is a nitride-based semiconductor light emitting element possessing a high light takeout efficiency. A light emitting element (11) comprises a support base (13) and a semiconductor stack (15). The semiconductor stack (15) comprises an n-type GaN semiconductor region (17), an active layer (19), and a p-type GaN semiconductor region (21). The n-type GaN semiconductor region (17), the active layer (19), and the p-type GaN semiconductor region (21) are mounted on a principal plane (13a) and are disposed in a direction of a predetermined axis Ax orthogonal to the principal plane (13a). A backside (13b) of the support base (13) is inclined to a plane orthogonal to a reference axis extended toward a c axis in a hexagonal gallium nitride semiconductor in the support base (13). The vector VC represents a c axis direction. The backside (13b) has such a surface morphology M that a plurality of protrusions (23) protruded toward the <000-1> axis are present. The direction of the predetermined axis Ax is different from the direction of the reference axis (direction of vector VC).
公开/授权文献:
- CN102187480B 氮化物基半导体发光元件、制造氮化物基半导体发光元件的方法和发光装置 公开/授权日：2014-03-12