基本信息:
- 专利标题： 光致电压元件及其制造方法
- 专利标题（英）：Photovoltaic element and method for manufacturing same
- 申请号：CN200980142325.0 申请日：2009-10-19
- 公开(公告)号：CN102187472A 公开(公告)日：2011-09-14
- 发明人： 海上晓 , 大山正嗣
- 申请人： 出光兴产株式会社
- 申请人地址： 日本东京都
- 专利权人： 出光兴产株式会社
- 当前专利权人： 出光兴产株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 上海市华诚律师事务所
- 代理人： 侯莉
- 优先权： 2008-270257 2008.10.20 JP; 2008-270258 2008.10.20 JP; 2008-270259 2008.10.20 JP; 2008-270260 2008.10.20 JP
- 国际申请： PCT/JP2009/068012 2009.10.19
- 国际公布： WO2010/047309 JA 2010.04.29
- 进入国家日期： 2011-04-20
- 主分类号： H01L31/04
- IPC分类号： H01L31/04
A light-transmitting n-type buffer layer (140) which forms a pn junction with a light absorbing layer (130) is laminated on the p-type light absorbing layer (130) which is conductive and formed of a compound having a chalcopyrite structure over a pair of rear-surface electrode layers (120) provided on one surface of a glass substrate (110). A light-transmitting transparent electrode layer (160) is laminated on the buffer layer (140) from one side of the light absorbing layer (130) and the buffer layer (140) to one of the rear-surface electrode layer (120). The transparent electrode layer (160) is formed as an amorphous thin film having indium oxide and zinc oxide as the main components and a film stress of +-1109Pa or less. A photovoltaic element can be excellently processed even by simple processing of mechanical scribing without generating troubles of cracks and chipping, thus, yield can be improved with improved productivity.
公开/授权文献:
- CN102187472B 光致电压元件及其制造方法 公开/授权日：2014-07-02