![铜布线表面保护液及半导体电路元件的制造方法](/CN/2009/8/27/images/200980135121.jpg)
基本信息:
- 专利标题: 铜布线表面保护液及半导体电路元件的制造方法
- 专利标题(英):Liquid for protecting copper wiring surface and method for manufacturing semiconductor circuit element
- 申请号:CN200980135121.4 申请日:2009-09-02
- 公开(公告)号:CN102150242A 公开(公告)日:2011-08-10
- 发明人: 山田健二 , 岛田宪司 , 松永裕嗣
- 申请人: 三菱瓦斯化学株式会社
- 申请人地址: 日本东京都
- 专利权人: 三菱瓦斯化学株式会社
- 当前专利权人: 三菱瓦斯化学株式会社
- 当前专利权人地址: 日本东京都
- 代理机构: 北京林达刘知识产权代理事务所
- 代理人: 刘新宇; 李茂家
- 优先权: 2008-229866 2008.09.08 JP; 2008-257200 2008.10.02 JP
- 国际申请: PCT/JP2009/065319 2009.09.02
- 国际公布: WO2010/026981 JA 2010.03.11
- 进入国家日期: 2011-03-08
- 主分类号: H01L21/304
- IPC分类号: H01L21/304 ; H01L21/3205 ; H01L23/52
Disclosed is a liquid for protecting a copper wiring material surface that is used in the production of a semiconductor circuit element including copper wiring and comprises an aqueous solvent and acetylene alcohols including at least 3-phenyl-2-propyn-1-ol. Also disclosed is a method for manufacturing a semiconductor circuit element, comprising forming an insulating film and/or a diffusion preventive film on a silicon substrate, then forming a copper film by sputtering, further forming a copper film or a copper alloy film containing not less than 80% by mass of copper by plating on the copper film, and then flattening the assembly by chemical mechanical polishing (CMP) to form a semiconductor substrate including copper wiring. In the method, the semiconductor substrate having an exposed copper wiring material surface is subjected to liquid contact treatment with the liquid for protecting a copper wiring material surface.
公开/授权文献:
- CN102150242B 铜布线表面保护液及半导体电路元件的制造方法 公开/授权日:2013-05-15
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/304 | ......机械处理,例如研磨、抛光、切割 |