
基本信息:
- 专利标题: 氮化物类半导体发光元件
- 专利标题(英):Nitride-based semiconductor light emitting device
- 申请号:CN201010231367.6 申请日:2010-07-15
- 公开(公告)号:CN101958386A 公开(公告)日:2011-01-26
- 发明人: 住友隆道 , 上野昌纪 , 京野孝史 , 盐谷阳平 , 善积祐介
- 申请人: 住友电气工业株式会社
- 申请人地址: 日本大阪府大阪市
- 专利权人: 住友电气工业株式会社
- 当前专利权人: 住友电气工业株式会社
- 当前专利权人地址: 日本大阪府大阪市
- 代理机构: 中原信达知识产权代理有限责任公司
- 代理人: 关兆辉; 穆德骏
- 优先权: 2009-166924 2009.07.15 JP
- 主分类号: H01L33/16
- IPC分类号: H01L33/16
An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle [theta] from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle [theta] is either in the range of more than 40 DEG and less than 90 DEG or in the range of not less than 150 DEGand less than 180 DEG. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.