![硅基三维结构磁场辅助电化学腐蚀的方法](/CN/2010/1/34/images/201010170397.jpg)
基本信息:
- 专利标题: 硅基三维结构磁场辅助电化学腐蚀的方法
- 专利标题(英):Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field
- 申请号:CN201010170397.0 申请日:2010-05-07
- 公开(公告)号:CN101866842B 公开(公告)日:2011-12-14
- 发明人: 周建 , 刘桂珍 , 王琳
- 申请人: 武汉理工大学
- 申请人地址: 湖北省武汉市洪山区珞狮路122号
- 专利权人: 武汉理工大学
- 当前专利权人: 武汉理工大学
- 当前专利权人地址: 湖北省武汉市洪山区珞狮路122号
- 代理机构: 湖北武汉永嘉专利代理有限公司
- 代理人: 王守仁
- 主分类号: H01L21/3063
- IPC分类号: H01L21/3063 ; H01L21/66
The invention relates to a method of performing electrochemical corrosion with the help of a silicon-based three-dimensional structure magnetic field. The method comprises the following steps: performing photoetching of a silicon wafer, preparing corrosive liquid, preparing for electrochemical corrosion, performing electrochemical corrosion and performing after-treatment, wherein when the corrosive liquid is prepared, hydrofluoric acid, dimethylformamide and water in the volume ratio of (2.5-3.5):(14-18):1 are mixed to be used as negative electrode corrosive liquid and analytically pure NH4F with the mass concentration of 96%, HF with the mass concentration of 40% and water in the volume ratio of 3:6:10 are mixed to prepare hydrofluoric acid buffer corrosive liquid used as positive electrode corrosive liquid; and during the preparation of the magnetic field, the direction of the magnetic field is perpendicular to (100) crystallographic orientation and also perpendicular to the direction of the electric field, and the direction of the magnetic field is used as x axis. The method of the invention has the advantages of simple technology, high practicability, easy implementation and the like, and the product with silicon-based three-dimensional structure of large-distance steep graphs.
公开/授权文献:
- CN101866842A 硅基三维结构磁场辅助电化学腐蚀的方法 公开/授权日:2010-10-20
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/306 | ......化学或电处理,例如电解腐蚀 |
--------------------H01L21/3063 | .......电解腐蚀 |