基本信息:
- 专利标题： 集成电路及形成集成电路的方法
- 专利标题（英）：Integrated circuit and method for forming integrated circuit
- 申请号：CN201010164123.0 申请日：2010-04-14
- 公开(公告)号：CN101866685A 公开(公告)日：2010-10-20
- 发明人： 廖忠志
- 申请人： 中国台湾积体电路制造股份有限公司
- 申请人地址： 中国台湾新竹市
- 专利权人： 中国台湾积体电路制造股份有限公司
- 当前专利权人： 中国台湾积体电路制造股份有限公司
- 当前专利权人地址： 中国台湾新竹市
- 代理机构： 隆天国际知识产权代理有限公司
- 代理人： 姜燕; 邢雪红
- 优先权： 61/169,193 2009.04.14 US; 12/694,063 2010.01.26 US
- 主分类号： G11C11/413
- IPC分类号： G11C11/413
An Integrated circuit and method for forming the integrated circuit. The integrated circuit includes a two-port static random access memory (SRAM) cell, which includes a first half write-port, a second half write-port, and a read-port. The first half write-port includes a first pull-up transistor, a first pull-down transistor, and a first pass-gate transistor interconnected to each other. The second half write-port includes a second pull-up transistor, a second pull-down transistor, and a second pass-gate transistor interconnected to each other and to the first half write-port. Channel lengths of the first pass-gate transistor and the second pass-gate transistor are less than channel lengths of the first pull-down transistor and the second pull-down transistor. The read-port includes a read-port pull-down transistor connected to the first half write-port, and a read-port pass-gate transistor connected to the read-port pull-down transistor.
公开/授权文献:
- CN101866685B 集成电路及形成集成电路的方法 公开/授权日：2012-12-12