The invention discloses a light sensitive component array forming method of a mercury cadmium telluride micro-table-board infrared detection chip, which relates to a manufacturing process technology of a photoelectric detector. The invention adopts the technical scheme that the forming method comprises the following steps of: firstly manufacturing a photoresist masking film graph for forming a deep micro-table-board array chip isolated groove on the surface of a mercury cadmium telluride infrared focal plane detection chip, then filling a certain quantity of bromine and hydrobromic acid mixedcorrosive liquid of a mercury cadmium telluride material in a groove graph formed from a photoresist masking film by utilizing a spin-coating method, and controlling the depth of the isolated groove required by a deep micro-table-board array chip through controlling the depth and the corrosion time of the isolated groove graph formed from the photoresist masking film, thereby effectively solving the problems of process damage and low duty ratio existing in a conventional light sensitive component array forming method. The method has the characteristics of complete compatibility with a conventional process of the HgCdTe detection chip, low cost, high controllability, high uniformity, no process-induced electrical damage and the like.