基本信息:
- 专利标题： 默认多晶硅间距设计规则下的混合多晶硅间距单元设计结构及系统
- 专利标题（英）：A design structure of mixed polysilicon distance unit under design rule of default polysilicon distance unit and system
- 申请号：CN200910176406.4 申请日：2009-09-14
- 公开(公告)号：CN101673735B 公开(公告)日：2011-11-16
- 发明人： 侯永清 , 田丽钧 , 鲁立忠 , 李秉中 , 郭大鹏
- 申请人： 台湾积体电路制造股份有限公司
- 申请人地址： 中国台湾新竹
- 专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人地址： 中国台湾新竹
- 代理机构： 北京市德恒律师事务所
- 代理人： 梁永
- 优先权： 61/096,385 2008.09.12 US; 12/347,628 2008.12.31 US
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L23/528
The present invention discloses an integrated circuit retaining a type-1 unit and a type-two unit, wherein the type-1 unit comprises a polysilicon line that contains a default distance between polycrystalline silicones; the type-2 unit comprises a polysilicon line that contains a non-default distance between the polycrystalline silicones; a first boundary area comprises at least one area of isolation; the area of isolation is set between the type-1 unit and the type-2 unit in a first direction; the first boundary area comprises at least one combined pseudo- polysilicon line, wherein at least one combined pseudo- polysilicon line comprises a first part in accordance with the default distance between the polysilicon lines of the type-1 unit, and a second part n accordance with the non- default distance between the polysilicon lines of the type-2 unit.
公开/授权文献:
- CN101673735A 默认多晶硅间距设计规则下的混合多晶硅间距单元设计结构及系统 公开/授权日：2010-03-17