![用于多个金属面触点接通的方法和膏体](/CN/2008/1/33/images/200810168837.jpg)
基本信息:
- 专利标题: 用于多个金属面触点接通的方法和膏体
- 专利标题(英):Method and paste for contacting metal surfaces
- 申请号:CN200810168837.1 申请日:2008-09-28
- 公开(公告)号:CN101431038B 公开(公告)日:2012-03-28
- 发明人: W·施米特 , T·迪克尔 , K·施滕格
- 申请人: W.C.贺利氏有限公司
- 申请人地址: 德国哈瑙市
- 专利权人: W.C.贺利氏有限公司
- 当前专利权人: 贺利氏电子有限两合公司
- 当前专利权人地址: 德国哈瑙市
- 代理机构: 北京天昊联合知识产权代理有限公司
- 代理人: 张天舒
- 优先权: 102007046901.4 2007.09.28 DE; 102008031893.0 2008.07.08 DE
- 主分类号: H01L21/60
- IPC分类号: H01L21/60 ; H05K3/32 ; B23K35/30
The invention relates to a method and a paste body for connecting a plurality of metallic contacts. The method for producing an electrically conductive or heat-conductive component for producing a metallic contact between two elements comprises forming an elemental silver (especially silver) from a metallic compound (especially a silver compound) between contact areas. According to the invention,a treatment temperature can be reduced below 240 DEG C when a silver solder is used, and the treatment pressure can be reduced to a normal pressure. The contact connection paste body of the inventioncomprises the metallic compound (especially the silver compound). The silver compound decomposes and forms the elemental silver under 400 DEG C. The invention in situ forms metals in chemical compounds to manufacture contacts which can be used above the temperature when the contacts are manufactured.
公开/授权文献:
- CN101431038A 用于多个金属面触点接通的方法和膏体 公开/授权日:2009-05-13
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/60 | ....引线或其他导电构件的连接,用于工作时向或由器件传导电流 |