基本信息:
- 专利标题： 薄膜音响共振器及其制造方法
- 专利标题（英）：Thin-film acoustic resonator and method of producing the same
- 申请号：CN200710085700.5 申请日：2002-05-10
- 公开(公告)号：CN101409536A 公开(公告)日：2009-04-15
- 发明人： 山田哲夫 , 长尾圭吾 , 桥本智仙
- 申请人： 宇部兴产株式会社
- 申请人地址： 日本山口县宇部市
- 专利权人： 宇部兴产株式会社
- 当前专利权人： 宇部兴产株式会社
- 当前专利权人地址： 日本山口县宇部市
- 代理机构： 中原信达知识产权代理有限责任公司
- 代理人： 樊卫民; 郭国清
- 优先权： 141845/2001 2001.05.11 JP; 141848/2001 2001.05.11 JP; 182194/2001 2001.06.15 JP
- 分案原申请号： 028096665
- 主分类号： H03H9/17
- IPC分类号： H03H9/17 ; H03H9/02 ; H03H3/02 ; G10L11/04 ; H03H9/56 ; H03H9/58 ; B06B1/06
A pit ( 52 ) is formed in a substrate comprising a silicon wafer ( 51 ) on a surface of which a silicon oxide thin layer ( 53 ) is formed. A sandwich structure ( 60 ) comprising a piezoelectric layer ( 62 ) and lower and upper electrodes ( 61, 63 ) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit ( 52 ). The upper surface of the lower electrode ( 61 ) and the lower surface of the piezoelectric layer ( 62 ) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode ( 61 ) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.