基本信息:
- 专利标题： 溅射方法及装置
- 专利标题（英）：Sputtering method and apparatus
- 申请号：CN200810214955.1 申请日：2008-08-29
- 公开(公告)号：CN101376965A 公开(公告)日：2009-03-04
- 发明人： 藤井隆满 , 直野崇幸
- 申请人： 富士胶片株式会社
- 申请人地址： 日本国东京都
- 专利权人： 富士胶片株式会社
- 当前专利权人： 富士胶片株式会社
- 当前专利权人地址： 日本国东京都
- 代理机构： 中科专利商标代理有限责任公司
- 代理人： 朱丹
- 优先权： 2007－225826 2007.08.31 JP
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; H01L21/203
The present invention provides a sputtering method and a sputtering device. The invention can realize high quality of sputtering-resisting film, control of inconsistent composition and increase of film forming reproductivity with simple composition and simple control thereby being able to form high-quality films such as piezoelectric film, insulating film or dielectric medium film and the like without film quality variation. The sputtering device comprises a sputtering electrode holding target material in vacuum container, and substrate frame which is opposite with the sputtering electrode and separated-configured and holds the substrate. The sputtering device also comprises an adjustable impedance circuit used for adjusting the impedance of substrate frame. The impedance of substrate frame is supported by adjusting the impedance of impedance circuit thereby adjusting the electric potential of substrate and further settling the task.
公开/授权文献:
- CN101376965B 溅射方法及装置 公开/授权日：2012-07-04