
基本信息:
- 专利标题: 半导体结构及其方法
- 专利标题(英):Semiconductor structure and method thereof
- 申请号:CN200810081718.2 申请日:2008-02-25
- 公开(公告)号:CN101256983A 公开(公告)日:2008-09-03
- 发明人: N·B·费尔申费尔德 , B·A·奥尔纳 , B·T·弗格利
- 申请人: 国际商业机器公司
- 申请人地址: 美国纽约
- 专利权人: 国际商业机器公司
- 当前专利权人: 格芯美国第二有限责任公司
- 当前专利权人地址: 美国纽约
- 代理机构: 北京市中咨律师事务所
- 代理人: 于静; 李峥
- 优先权: 11/680,163 2007.02.28 US
- 主分类号: H01L21/8249
- IPC分类号: H01L21/8249 ; H01L27/06
High performance bipolar transistors with raised extrinsic self-aligned base are integrated into a BiCMOS structure containing CMOS devices. By forming pad layers and raising the height of an intrinsic base layer relative to the source and drain of preexisting CMOS devices and by forming an extrinsic base through selective epitaxy, the effect of topographical variations is minimized during a lithographic patterning of the extrinsic base. Also, by not employing any chemical mechanical planarization process during the fabrication of the bipolar structures, complexity of process integration is reduced. Internal spacers or external spacers may be formed to isolate the base from the emitter. The pad layers, the intrinsic base layer, and the extrinsic base layer form a mesa structure with coincident outer sidewall surfaces.
公开/授权文献:
- CN101256983B 半导体结构及其方法 公开/授权日:2010-12-08
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
--------------H01L21/782 | ....制造多个器件,每一个由单个电路元件组成 |
----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
------------------H01L21/8222 | ......双极工艺 |
--------------------H01L21/8249 | .......双极和MOS工艺 |