
基本信息:
- 专利标题: 一种电沉积硅的方法
- 专利标题(英):Method of electrodepositing silicon
- 申请号:CN200710106013.7 申请日:2007-05-29
- 公开(公告)号:CN101054675A 公开(公告)日:2007-10-17
- 发明人: 李运刚 , 梁精龙 , 田薇 , 何小凤
- 申请人: 河北理工大学
- 申请人地址: 河北省唐山市路南区新华西道46号
- 专利权人: 河北理工大学
- 当前专利权人: 河北理工大学
- 当前专利权人地址: 河北省唐山市路南区新华西道46号
- 代理机构: 石家庄冀科专利商标事务所有限公司
- 代理人: 李桂芳; 周晓萍
- 主分类号: C25B1/00
- IPC分类号: C25B1/00
A process for electrodeposition of silicon belongs to the electroanalysis and electrophoresis technology field and used forone-step electrodeposition of silicon from SiO2 by using molten salt as medium and adoping direct current. Said process is characterized as follows: using a 3-constituent element composed of NaCl, KCl and NaF as medium, wherein the mol ratio thereof is 1:1:0.5-1:1:4.5, and adding powdery SiO2 which mass is 10% of the fused-salt medium mass therein; after pre-electrolysis impurities removing, electrodepositing pure silicon with electrodeposition temperature of 800 -950 DEG C, electrodeposit time of 0.5 -3 hours and ampere density of 500-1000 A/m2.The present invention is characterized as follows: 1, the constituent elements forming molten salt are usual and cheap pharma-ceutical products which are easy to obtain, then the cost is low and the consumption is small; 2, the manufacturing technique is simple and the process is easy to control. Said process in accordance with the present invention possesses excellent applications foreground in semi-conductor devices fabricating.
IPC结构图谱:
C | 化学;冶金 |
--C25 | 电解或电泳工艺;其所用设备 |
----C25B | 生产化合物或非金属的电解工艺或电泳工艺;其所用的设备 |
------C25B1/00 | 无机化合物或非金属的电解生产 |