![控制半导体激光器的光功率和消光比](/CN/2006/1/12/images/200610064490.jpg)
基本信息:
- 专利标题: 控制半导体激光器的光功率和消光比
- 专利标题(英):Controlling optical power and extincation ratio of a semiconductor laser
- 申请号:CN200610064490.7 申请日:2006-11-21
- 公开(公告)号:CN101013924A 公开(公告)日:2007-08-08
- 发明人: F·王 , C·-C·刘 , H·程 , L·徐
- 申请人: 英特尔公司
- 申请人地址: 美国加利福尼亚州
- 专利权人: 英特尔公司
- 当前专利权人: 英特尔公司
- 当前专利权人地址: 美国加利福尼亚州
- 代理机构: 中国专利代理(香港)有限公司
- 代理人: 李亚非; 王勇
- 优先权: 11/284755 2005.11.21 US
- 主分类号: H04B10/17
- IPC分类号: H04B10/17 ; H04B10/08 ; H04B10/155 ; H01S5/0683 ; H01S5/042
Disclosed herein are methods, apparatus, and systems to achieve substantially constant optical power and/or extinction ratio for a semiconductor laser. In one aspect, a microcontroller of an optical transmitter may adjust an electrical current that is provided to a semiconductor laser based at least in part on a comparison of a first measured optical power of light emitted by the semiconductor laser and a predetermined target optical power. The microcontroller may then determine an electrical current that is capable of giving the semiconductor laser a substantially constant extinction ratio by evaluating an equation with the first measured optical power and a second optical power measured after the controller adjusts the electrical current.
公开/授权文献:
- CN101013924B 控制半导体激光器的光功率和消光比 公开/授权日:2011-07-06